28LV010RPDB-20 MAXWELL [Maxwell Technologies], 28LV010RPDB-20 Datasheet

28LV010RPDB-20

Manufacturer Part Number

28LV010RPDB-20

Description

3.3V 1 Megabit (128K x 8-Bit) EEPROM

Manufacturer

MAXWELL [Maxwell Technologies]

Datasheet

1.28LV010RPDB-20.pdf (20 pages)

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• 3.3V low voltage operation 128K x 8 Bit EEPROM

• R

• Total dose hardness:

• Excellent Single Event Effects:

• Package:

• Address Access Time:

• High endurance:

• Page write mode:

• Automatic programming

• Low power dissipation

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

EATURES

radiation

- > 100 krad (Si), depending upon space mission

- SEL

- SEU

- SEU saturated cross section = 3E-6 cm

- SEU

- SEU saturated cross section = 5E-3 cm

- 32 Pin R

- JEDEC-approved byte-wide pinout

- 200, 250 ns maximum access times available

- 10,000 erase/write (in Page Mode), 10-year data

- 1 to 128 bytes

- 10 ms automatic page/byte write

- 20 mW/MHz active current (typ.)

- 72 µ W standby (maximum)

with hard errors

retention

-P

® radiation-hardened against natural space

> 84 MeV/mg/cm

> 37 Mev/mg/cm

= 11.4 Mev/mg/cm

-P

® flat pack

® DIP

(read mode)

(write mode)

(read mode)

(write mode)

RES

A16

03.14.03 REV 6

Buffer and

Address

Latch

Maxwell Technologies’ 28LV010 high density, 3.3V, 1 Megabit

EEPROM microcircuit features a greater than 100 krad (Si)

total dose tolerance, depending upon space mission. The

28LV010 is capable of in-system electrical Byte and Page pro-

grammability. It has a 128-Byte Page Programming function to

make its erase and write operations faster. It also features

Data Polling and a Ready/Busy signal to indicate the comple-

tion of erase and programming operations. In the 28LV010,

hardware data protection is provided with the RES pin, in addi-

tion to noise protection on the WE signal and write inhibit on

power on and off. Meanwhile, software data protection is

implemented using the JEDEC-optional Standard algorithm.

The 28LV010 is designed for high reliability in the most

demanding space applications.

Maxwell Technologies' patented R

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

Control Logic Timing

ESCRIPTION

High Voltage

Generator

3.3V 1 Megabit (128K x 8-Bit)

All data sheets are subject to change without notice

Logic Diagram

X Decoder

Y Decoder

-P

I/O0

provides greater than 100

-P

Memory Array

I/O Buffer and

Input Latch

Data Latch

Y Gating

28LV010

® packaging technol-

EEPROM

I/O7

RDY/Busy

Related parts for 28LV010RPDB-20

28LV010RPDB-20 Summary of contents

Page 1

... This product is available with screening up to Class S. All data sheets are subject to change without notice 03.14.03 REV 6 28LV010 EEPROM I/O0 I/O7 RDY/Busy I/O Buffer and Input Latch Y Gating Memory Array Data Latch -P ® packaging technol provides greater than 100 ©2001 Maxwell Technologies ...

Page 2

Megabit (128K x 8-Bit) EEPROM T ABLE 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 13-15, 17- 28LV010 A ABLE P ARAMETER Supply Voltage (Relative to Vss) Input Voltage (Relative to Vss) Package Weight ...

Page 3

Megabit (128K x 8-Bit) EEPROM T 4. 28LV010 R ABLE P ARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. V min = -1.0 V for pulse width < min = 2.2 ...

Page 4

Megabit (128K x 8-Bit) EEPROM T 7. 28LV010 AC C ABLE (V = 3.3V ± 10 ARAMETER EST Address Access Time -200 -250 Chip Enable Access Time -200 OE ...

Page 5

Megabit (128K x 8-Bit) EEPROM T 8. 28LV010 AC E ABLE LECTRICAL (V = 3.3V ± 10 ARAMETER Address Setup Time -200 -250 Chip Enable to Write Setup Time (WE controlled) -200 -250 Write Pulse ...

Page 6

Megabit (128K x 8-Bit) EEPROM T 8. 28LV010 AC E ABLE LECTRICAL (V = 3.3V ± 10 ARAMETER Byte Load Cycle -200 -250 2 Data Latch Time -200 -250 2 Byte Load Window -200 -250 ...

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Megabit (128K x 8-Bit) EEPROM IGURE AGE IGURE OFTWARE ATA (2) (CE C RITE IMING AVEFORM (1) ( ROTECTION IMING AVEFORM All data sheets are ...

Page 12

Megabit (128K x 8-Bit) EEPROM IGURE OFTWARE ATA F IGURE T W (2) ( ROTECTION IMING AVEFORM IN NON ATA OLLING IMING AVEFORM All data sheets are subject ...

Page 13

Megabit (128K x 8-Bit) EEPROM F EEPROM A N PPLICATION OTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature ...

Page 14

Megabit (128K x 8-Bit) EEPROM RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when V is switched. RES should be high during read and ...

Page 15

Megabit (128K x 8-Bit) EEPROM When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to CC programming mode by mistake. To prevent this unintentional ...

Page 16

Megabit (128K x 8-Bit) EEPROM 32-P S YMBOL ® LAT ACKAGE D IMENSION 0.121 ...

Page 17

Megabit (128K x 8-Bit) EEPROM YMBOL OLERANT LAT ACK D IMENSION 0.095 ...

Page 18

Megabit (128K x 8-Bit) EEPROM S YMBOL eA Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type Constant Acceleration is ...

Page 19

Megabit (128K x 8-Bit) EEPROM Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within ...

Page 20

Megabit (128K x 8-Bit) EEPROM Product Ordering Options Model Number 28LV010 -XX 1.) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type- Constant Acceleration is 3000g’s. Feature Option Details Access Time ...

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