CM75TU-24F_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75TU-24F_09 Datasheet - Page 2

• Manufacturer Part Number: CM75TU-24F_09
• Description: HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. I
*
*
*
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
R
1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
3 : If you use this value, R
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
j
stg
CES
GES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC(Note 1)
th(j-c)
th(j-c)
th(c-f)
th(j-c’)
G
G
rr (Note 1)
(Note 1)
—
—
(Note 1)
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Q
R
Q
E
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
Parameter
Parameter
th(f-a)
(Tj = 25°C, unless otherwise specified)
should be measured just under the chips.
j
) should not increase beyond 150°C.
*1
(Tj = 25°C, unless otherwise specified)
G-E Short
C-E Short
T
Pulse
T
Pulse
T
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
I
I
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to heat sink, Thermal compound applied
Case temperature measured point is just under the chips
C
C
E
E
C
C
C
CE
CE
GE
CC
CC
GE
G
= 75A, V
= 7.5mA, V
= 75A, V
= 75A
GE
= 25°C
= 25°C
= 25°C
= 4.2Ω, Inductive load
= V
= 10V
= 0V
= 600V, I
= 600V, I
= ±15V
= V
CES
GES
GE
GE
, V
, V
C
CE
C
= 0V
GE
= 15V
= 75A, V
= 75A
CE
= 10V
= 0V
= 0V
Test conditions
Conditions
GE
2
= 15V
j
) does not exceed T
*2
(1/6 module)
T
T
j
j
= 25°C
= 125°C
(Note 2)
(Note 2)
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min.
4.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
rating.
–40 ~ +150
–40 ~ +125
2.5 ~ 3.5
2.5 ~ 3.5
Ratings
CM75TU-24F
Limits
1200
2500
0.09
Typ.
±20
150
150
450
680
825
1.8
1.9
3.1
75
75
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0.22 *
Max.
0.75
0.28
0.47
100
400
300
150
2.4
1.3
3.2
20
29
50
42
—
—
—
—
1
7
3
Feb. 2009
N • m
N • m
Vrms
K/W
Unit
Unit
mA
nC
µC
µA
nF
°C
°C
ns
ns
W
V
Ω
V
V
A
A
V
V
g