CM75TU-34KA_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75TU-34KA_09 Datasheet
![no-image](/images/no-image-200.jpg)
CM75TU-34KA_09
Related parts for CM75TU-34KA_09
CM75TU-34KA_09 Summary of contents
Page 1
... OUTLINE DRAWING & CIRCUIT DIAGRAM 21.7 GuP G E EuP GvP EvP GwP EwP 5–M5NUTS 11 2.8 Tc measured point CM75TU-34KA HIGH POWER SWITCHING USE ● ..................................................................... ● V CES .......................................................... ● Insulated Type ● 6-elements in a pack 107 4–φ5.5 90 ±0.25 MOUNTING HOLES ...
Page 2
... E GE IGBT part (1/6 module) FWDi part (1/6 module) *2 Case to heat sink, Thermal compound applied Case temperature measured point is just under the chips ) does not exceed MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE Ratings 1700 ±20 75 150 (Note 2) 75 (Note 2) 150 660 – ...
Page 3
... COLLECTOR-EMITTER VOLTAGE MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE TRANSFER CHARACTERISTICS (TYPICAL 10V 25° 125° GATE-EMITTER VOLTAGE V (V) GE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 25° ...
Page 4
... I = 75A – – –3 0 – 100 200 GATE CHARGE Q 4 CM75TU-34KA (TYPICAL (A) E (TYPICAL) = 800V 1000V CC 300 400 500 (nC) G Feb. 2009 ...