K7R321884M-FC16 SAMSUNG [Samsung semiconductor], K7R321884M-FC16 Datasheet - Page 10

• Manufacturer Part Number: K7R321884M-FC16
• Description: 1Mx36 & 2Mx18 QDRTM II b4 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note: For power-up, V
K7R321884M
AC ELECTRICAL CHARACTERISTICS
Notes: 1. This condition is for AC function test only, not for AC parameter test.
OPERATING CONDITIONS
K7R323684M
Overershoot Timing
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250
Input High Voltage
Input Low Voltage
Supply Voltage
Reference Voltage
Ground
Output Power Supply Voltage
Output Timing Reference Level
Core Power Supply Voltage
Input High/Low Level
Input Reference Level
Input Rise/Fall Time
V
V
DDQ
DDQ
2. To maintain a valid level, the transitioning edge of the input must :
c) After the AC target level is reached, continue to maintain at least the target DC level, V
b) Reach at least the target AC level
a) Sustain a constant slew rate from the current AC level through the target AC level, V
+0.25V
V
+0.5V
V
IL
DDQ
Parameter
PARAMETER
PARAMETER
IH
V
DDQ
20% t
+0.3V and V
KHKH
(MIN)
D D
(0 C
Symbol
V
T
V
V
1.7V and V
V
IH
R
DDQ
REF
DD
/V
/T
F
IL
T
A
DDQ
70 C)
SYMBOL
SYMBOL
V
V
1.25/0.25
IH
IL
1.7~1.9
1.4~1.9
V
V
0.3/0.3
V
(V
Value
V
V
0.75
DDQ
DDQ
1.4V t
REF
(AC)
(AC)
DD
SS
DD
/2
=1.8V 0.1V, T
- 10 -
200ms
1Mx36 & 2Mx18 QDR
Undershoot Timing
Unit
ns
V
V
V
V
V
V
V
SS
SS
V
-0.5V
-0.25V
REF
V
V
A
IH
SS
=0 C to +70 C)
MIN
AC TEST OUTPUT LOAD
MIN
0.68
1.7
1.4
-
0
+ 0.2
IL(AC)
SRAM
IL(DC)
or V
or V
IH(AC)
V
REF
ZQ
IH(DC)
V
20% t
REF
MAX
-
MAX
250
0.95
0.75V
KHKH
- 0.2
1.9
1.9
0
(MIN)
TM
Zo=50
UNIT
II b4 SRAM
V
V
UNIT
V
V
V
V
V
NOTES
Dec. 2003
DDQ
1,2
1,2
Rev 2.0
/2
50