HMC591_09 HITTITE [Hittite Microwave Corporation], HMC591_09 Datasheet - Page 4

• Manufacturer Part Number: HMC591_09
• Description: GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

Gain & Power vs. Supply Voltage @ 8 GHz
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +7.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 117.6 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
-10
-20
-30
-40
-50
-60
-70
-80
38
34
30
26
22
18
0
6.5
6
6.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
7
Vdd SUPPLY VOLTAGE (V)
FREQUENCY (GHz)
7.5
7
8
P1dB
GAIN
Psat
+25C
+85C
-40C
8.5
+8 Vdc
-2 to 0 Vdc
+15 dBm
175 °C
10.59 W
8.5 °C/W
-65 to +150 °C
-55 to +85 °C
v02.0109
9
Order On-line at www.hittite.com
9.5
7.5
10
Gain & Power vs. Supply Current @ 8 GHz
Power Dissipation
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
POWER AMPLIFIER, 6 - 10 GHz
38
34
30
26
22
18
10
9
8
7
6
5
940
-14
GaAs PHEMT MMIC 2 WATT
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V)
-10
+6.5
+7.0
+7.5
Idd SUPPLY CURRENT (mA)
-6
INPUT POWER (dBm)
6GHz
7GHz
8GHz
9GHz
10GHz
-2
1140
2
P1dB
GAIN
Psat
HMC591
6
Idd (mA)
1355
1340
1325
10
1340
14
3 - 81
3