HMC591_09 HITTITE [Hittite Microwave Corporation], HMC591_09 Datasheet

HMC591_09

Manufacturer Part Number

HMC591_09

Description

GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz

Manufacturer

HITTITE [Hittite Microwave Corporation]

Datasheet

1.HMC591_09.pdf (8 pages)

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Typical Applications

The HMC591 is ideal for use as a power amplifi er for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Test Equipment & Sensors

• Military End-Use

• Space

Functional Diagram

Electrical Specifi cations,

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.

[2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Parameter

[2]

v02.0109

Order On-line at www.hittite.com

= +25° C, Vdd = +7V, Idd = 1340 mA

Min.

6 - 10

1340

Typ.

0.05

33.5

Features

Saturated Output Power: +34 dBm @ 24% PAE

Output IP3: +43 dBm

Gain: 23 dB

DC Supply: +7.0 V @ 1340 mA

50 Ohm Matched Input/Output

2.47 mm x 2.49 mm x 0.1 mm

General Description

The HMC591 is a high dynamic range GaAs PHEMT

MMIC 2 Watt Power Amplifi er which operates from

6 to 10 GHz. This amplifi er die provides 23 dB of

gain and +34 dBm of saturated power, at 24% PAE

from a +7.0V supply. Output IP3 is +43 dBm typical.

The RF I/Os are DC blocked and matched to 50

Ohms for ease of integration into Multi-Chip-Modules

(MCMs). All data is taken with the chip in a 50 ohm test

fi xture connected via 0.025mm (1 mil) diameter wire

bonds of length 0.31mm (12 mils). For applications

which require optimum OIP3, Idd should be set for 940

mA, to yield +43 dBm OIP3. For applications which

require optimum output P1dB, Idd should be set for

1340 mA, to yield +33 dBm Output P1dB.

POWER AMPLIFIER, 6 - 10 GHz

Max.

GaAs PHEMT MMIC 2 WATT

Min.

30.5

[1]

6.8 - 9

1340

Typ.

0.05

33.5

HMC591

Max.

dB/ °C

Units

dBm

GHz

Related parts for HMC591_09

HMC591_09 Summary of contents

Page 1

Typical Applications The HMC591 is ideal for use as a power amplifi er for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain ...

Page 2

Broadband Gain & Return Loss S21 S11 5 S22 0 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C -5 +85C -40C ...

Page 3

P1dB vs. Current 6.5 7 7.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm 6.5 7 7.5 FREQUENCY (GHz) ...

Page 4

Gain & Power vs. Supply Voltage @ 8 GHz 38 34 GAIN 30 P1dB Psat 6.5 7 Vdd SUPPLY VOLTAGE (V) Reverse Isolation vs. Temperature 1340 mA 0 -10 -20 +25C +85C -40C -30 ...

Page 5

Outline Drawing 3 Die Packaging Information Standard GP-1 (Gel Pack) [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite ...

Page 6

Pad Descriptions Pad Number Function 1 RFIN Power Supply Voltage for the amplifi er. External bypass Vdd 1-5 capacitors of 100 pF and 0.1 μF are required. 6 RFOUT Gate control for amplifi er. ...

Page 7

Assembly Diagram 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER GHz ...

Page 8

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...

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