H5PS5162FFR-C HYNIX [Hynix Semiconductor], H5PS5162FFR-C Datasheet - Page 18

• Manufacturer Part Number: H5PS5162FFR-C
• Description: 512Mb DDR2 SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 1.0 / July. 2008
3.5. Input/Output Capacitance
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ T
Refresh Parameters by Device Density
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to Active
/Refresh command time
Average periodic refresh interval tREFI
Bin(CL-tRCD-tRP)
CAS Latency
Parameter
Speed
tRCD
tRAS
tRC
tRP
CASE
Parameter
≤ 95℃; V
Parameter
DDR2-800D
57.25
5-5-5
DDQ
12.5
12.5
min
45
5
= 1.8 V +/- 0.1V; V
DDR2-800E
85℃ < T
0 ℃≤ T
6-6-6
min
Symbol
15
15
45
60
6
tRFC
DD
CASE
CASE
= 1.8V +/- 0.1V)
Symbol
CDCK
CDIO
CCK
CDI
CIO
≤ 85℃
≤ 95℃
CI
DDR2-667D
5-5-5
min
15
15
45
60
5
DDR2- 400
DDR2- 533
Min
1.0
1.0
2.5
256Mb 512Mb
x
x
x
7.8
3.9
75
Max
0.25
0.25
2.0
2.0
4.0
0.5
DDR2-533C
105
7.8
3.9
4-4-4
Min
min
DDR2 667
1.0
1.0
2.5
15
15
45
60
4
x
x
x
H5PS5162FFR series
127.5
1Gb
7.8
3.9
Max
0.25
0.25
2.0
2.0
3.5
0.5
DDR2-400B
2Gb
195
7.8
3.9
Min
DDR2 800
1.0
1.0
2.5
x
x
x
3-3-3
min
15
15
40
55
5
327.5
4Gb
Max
0.25
1.75
0.25
7.8
3.9
2.0
3.5
0.5
Release
Units
Units
Units
tCK
ns
ns
ns
ns
pF
pF
pF
pF
pF
pF
ns
us
us
18