H57V2622GMR-60X HYNIX [Hynix Semiconductor], H57V2622GMR-60X Datasheet - Page 12

• Manufacturer Part Number: H57V2622GMR-60X
• Description: 256Mb : x32 Dual Die Synchronous DRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

AC CHARACTERISTICS II
Note:
1. A new command can be given t
Rev 1.0 / Oct. 2009
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
CAS to CAS Delay
Write Command to Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
Precharge to Data Output High-Z
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
Parameter
RC
after self refresh exit.
Operation
Auto Refresh
(AC operating conditions unless otherwise noted)
CL = 3
CL = 2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RRC
RCD
RAS
RP
RRD
CCD
WTL
DPL
DAL
DQZ
DQM
MRD
PROZ3
PROZ2
DPE
SRE
REF
Symbol
Min
Synchronous DRAM Memory 256Mbit
60
60
18
42
18
12
1
0
2
2
0
2
3
1
1
-
-
166
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
Min
63
63
20
42
20
15
1
0
2
2
0
2
3
2
1
1
-
H57V2622GMR Series
133
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
ns
ns
ns
ns
ns
ns
Note
1
12