H57V2582GTR-60J HYNIX [Hynix Semiconductor], H57V2582GTR-60J Datasheet - Page 8

• Manufacturer Part Number: H57V2582GTR-60J
• Description: 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
• Manufacturer: HYNIX [Hynix Semiconductor]

ABSOLUTE MAXIMUM RATING
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
Note: 1. All voltages are referenced to V
AC OPERATING TEST CONDITION
Note: 1. See Next Page
Rev 1.0 / Aug. 2009
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
Voltage on VDD supply relative to V
Short Circuit Output Current
Power Dissipation
Power Supply Voltage
Input High Voltage
Input Low Voltage
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
2. V
3. V
IH(
IL
(min) is acceptable -2.0V for a pulse width with <= 3ns of duration.
Parameter
Max) is acceptable VDDQ + 2V for a pulse width with <= 3ns of duration.
Parameter
Parameter
SS
SS
SS
= 0V.
V
Symbol
DD
V
V
, V
IH
IL
DDQ
(T
A
= -40 to 85
V
V
Symbol
DD
IN
T
Min
-0.3
, V
I
3.0
2.0
, V
T
P
STG
OS
A
D
V
Symbol
OUT
DDQ
V
tR / tF
IH
V
outref
CL
o
trip
Synchronous DRAM Memory 256Mbit
/ V
C, V
IL
DD
V
DDQ
=3.3±0.3V / V
Max
3.6
0.8
2.4 / 0.4
+ 0.3
Value
1.4
1.4
H57V2582GTR-xxI Series
50
1
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
-40 ~ 85
Rating
50
1
SS
Unit
=0V)
V
V
V
Unit
pF
ns
V
V
V
Note
1, 2
1, 3
Unit
mA
o
o
1
W
V
V
Note
C
C
1
8