H57V2582GTR-60J HYNIX [Hynix Semiconductor], H57V2582GTR-60J Datasheet - Page 15

• Manufacturer Part Number: H57V2582GTR-60J
• Description: 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
• Manufacturer: HYNIX [Hynix Semiconductor]

CURRENT STATE TRUTH TABLE
Rev 1.0 / Aug. 2009
Current
State
Active
Read
Row
idle
CS RAS CAS WE
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
X
H
H
H
X
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
X
H
H
H
H
X
H
H
H
H
L
L
L
L
L
L
L
L
L
BA0/
BA1
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
Command
OP CODE
OP CODE
OP CODE
A
Row Add.
Row Add.
Row Add.
Col Add.
Col Add.
Col Add.
Col Add.
Col Add.
Col Add.
max
A10
A10
A10
A10
A10
A10
(Sheet 1 of 4)
X
X
X
X
X
X
X
X
X
X
X
-A0
Precharge
Precharge
Mode Register Set
Mode Register Set
Auto or Self Refresh
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Auto or Self Refresh
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Description
Synchronous DRAM Memory 256Mbit
H57V2582GTR-xxI Series
Set the Mode Register
Start Auto or Self Refresh
No Operation
Activate the specified
bank and row
ILLEGAL
ILLEGAL
No Operation
No Operation or Power
Down
ILLEGAL
ILLEGAL
Precharge
ILLEGAL
Start Write : optional
AP(A10=H)
Start Read : optional
AP(A10=H)
No Operation
No Operation
ILLEGAL
ILLEGAL
Termination Burst: Start
the Precharge
ILLEGAL
Termination Burst: Start
Write(optional AP)
Termination Burst: Start
Read(optional AP)
Continue the Burst
Action
Notes
15
8,9
13
13
13
13
5
4
4
3
3
7
4
6
6
4
8