H57V1262GFR-50X HYNIX [Hynix Semiconductor], H57V1262GFR-50X Datasheet - Page 6

• Manufacturer Part Number: H57V1262GFR-50X
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: HYNIX [Hynix Semiconductor]

ABSOLUTE MAXIMUM RATING
Notes:
1. Commercial (
2. Industrial (
DC OPERATING CONDITION
Notes:
1. All voltages are referenced to V
2. V
3. V
AC OPERATING TEST CONDITION
Note: 1.
Rev. 1.0 / Aug. 2009
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature / Time
Power Supply Voltage
Input High Voltage
Input Low Voltage
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
IH
IL
(min) is acceptable -2.0V AC pulse width with <=3ns of duration
(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
Parameter
-40 ~ 85
0 ~ 70
Parameter
O utput
o
o
C)
C
)
Parameter
D C O utput Load C ircuit
SS
= 0V
V
Symbol
DD
V
V
, V
IH
IL
DDQ
V
V
(V
T
Symbol
DD
IN
Vtt = 1.4V
Synchronous DRAM Memory 128Mbit (8Mx16bit)
SOLDER
R T = 500
T
Min.
DD
-0.3
, V
I
3.0
2.0
, V
T
P
STG
OS
50pF
A
D
=3.3±0.3V, V
OUT
DDQ
O utput
Ω
V
Symbol
V
tR / tF
IH
V
outref
CL
trip
Typ
/ V
3.3
3.0
-
SS
IL
AC O utput Load C ircuit
-40 ~ 85
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ 125
0 ~ 70
260 / 10
Rating
=0V)
Z0 = 50
50
1
V
o
C
o
DDQ
C
Ω
2.4 / 0.4
Max
Value
3.6
0.8
1.4
1.4
50
+ 0.3
1
H57V1262GFR Series
o
Vtt = 1.4V
C / Sec
R T = 50
Unit
mA
o
o
o
W
50pF
V
V
C
C
C
Unit
V
V
V
Unit
ns
pF
Ω
V
V
V
Note
Note
1, 2
1, 3
Note
1
2
1
1
6