H57V1262GFR-50X HYNIX [Hynix Semiconductor], H57V1262GFR-50X Datasheet
H57V1262GFR-50X
Related parts for H57V1262GFR-50X
H57V1262GFR-50X Summary of contents
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Synchronous DRAM based 4Bank x16 I/O Document Title 4Bank 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 This document is a general product description and is subject to change without notice. Hynix ...
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... Auto refresh and self refresh • 4096 Refresh cycles / 64ms ● This product is in compliance with the directive pertaining of RoHS. ORDERING INFORMATION Part No. H57V1262GFR-50X H57V1262GFR-60X H57V1262GFR-70X H57V1262GFR-75X 1. H57V1262GFR-XXC Series: Normal power, Commercial Temp.(0 2. H57V1262GFR-XXI Series: Normal power, Industrial Temp. (-40 3. H57V1262GFR-XXL Series: Low power, Commercial Temp.(0 4 ...
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... A VSSQ VDDQ B VDDQ VSSQ C VSSQ VDDQ D VDDQ VSSQ E NC VSS VDD F CKE /CAS < Top View > H57V1262GFR Series DQ0 VDD DQ2 DQ1 DQ4 DQ3 DQ6 DQ5 LDQM DQ7 /RAS /WE BA0 BA1 / A10 A3 ...
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... Synchronous DRAM Memory 128Mbit (8Mx16bit) Internal Row Counter 2Mx16 BANK 3 2Mx16 BANK 2 Row Pre Decoder Column Pre Decoder Column Add Counter Burst Counter CAS Latency Mode Register H57V1262GFR Series 2Mx16 BANK 1 2Mx16 BANK 0 Memory Cell Array Y-Decoder Pipe Line Control Data Out Control DQ0 DQ15 4 ...
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... Reserved Rev. 1.0 / Aug. 2009 Synchronous DRAM Memory 128Mbit (8Mx16bit Code 0 0 Burst Length H57V1262GFR Series CAS Latency BT Burst Length Burst Type A3 Burst Type 0 Sequential 1 Interleave Burst Length ...
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... SOLDER Symbol Min 3.0 DD DDQ =3.3±0.3V Symbol Vtt = 1.4V Ω 500 O utput 50pF H57V1262GFR Series Rating Unit - -55 ~ 125 o C -1.0 ~ 4.6 V -1 260 / Sec Typ Max Unit 3.3 3 ...
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... Rev. 1.0 / Aug. 2009 Synchronous DRAM Memory 128Mbit (8Mx16bit) =3.3V) DD Pin CLK A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE, LDQM, UDQM DQ0 ~ DQ15 Symbol Min 2 =0V IN H57V1262GFR Series Symbol Min Max CI1 2.0 4.0 CI2 2.0 4.0 CI/O 3.0 5.5 Max Unit Note ...
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... CKE ≥ V (min ∞ Input signals are stable. t ≥ t (min), I =0mA All banks active t ≥ t (min), All banks active RC RC Normal CKE ≤ 0.2V Low power H57V1262GFR Series Speed Unit Note 100 ...
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... CLW t - 4.5 - AC3 AC2 t 2 1 0 1 0 1.5 - 1.5 CKS t 0.8 - 0.8 CKH t 1 0 1.0 - 1.0 OLZ t - 4.5 - OHZ3 OHZ2 & t > 1ns, then [( H57V1262GFR Series 7 H 7.0 7.5 1000 1000 1000 - 10 - 2 2.0 - 2.5 - 5.4 - 5 6.0 - 2 1 0 1 0 1 0 1 0 ...
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... WTL DPL t DAL DQZ DQM MRD PROZ3 PROZ2 DPE SRE REF after self refresh exit. H57V1262GFR Series Max Min Max Min Max - 120 100K 42 100K ...
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... H57V1262GFR Series DQM ADDR A10/ code ball High X ...
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... PACKAGE INFORMATION 54 Ball FBGA 8.0mm x 8.0mm 6.4 8.00 Typ. 6.4 Rev. 1.0 / Aug. 2009 Synchronous DRAM Memory 128Mbit (8Mx16bit) 8.00 Typ. Bottom View 1.60 0.80 Typ. H57V1262GFR Series A1 INDEX MARK Unit 0.8±0.1 [mm] 0.80 Typ. +/- 0.05 +0.025/- 0.05 0.8± 0.1 1.0 max 0.45 0.35 12 ...