H57V1262GFR-50X HYNIX [Hynix Semiconductor], H57V1262GFR-50X Datasheet - Page 10

• Manufacturer Part Number: H57V1262GFR-50X
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: HYNIX [Hynix Semiconductor]

AC CHARACTERISTICS II
Note:
1. A new command can be given t
Rev. 1.0 / Aug. 2009
RAS Cycle Time
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
CAS to CAS Delay
Write Command to
Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
Precharge to Data
Output High-Z
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
Parameter
Operation
Auto
Refresh
CL = 3
CL = 2
RRC
after self refresh exit.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
RC
RRC
RCD
RAS
RP
RRD
CCD
WTL
DPL
DAL
DQZ
DQM
MRD
PROZ3
PROZ2
DPE
SRE
REF
(AC operating conditions unless otherwise noted)
38.7
Min
55
55
15
15
10
1
0
2
2
0
2
3
1
1
-
-
Synchronous DRAM Memory 128Mbit (8Mx16bit)
5
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
60
60
18
42
18
12
1
0
2
2
0
2
3
1
1
-
-
6
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
t
DPL
Min
63
63
20
42
20
14
+ t
0
1
2
2
0
2
3
1
1
-
-
RP
7
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
H57V1262GFR Series
Min
63
63
20
42
20
15
1
0
2
2
0
2
3
2
1
1
-
H
Max
120
64
K
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Uni
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
ns
ns
ns
ns
ns
ns
t
Not
e
1
10