K6R1004C1C SAMSUNG [Samsung semiconductor], K6R1004C1C Datasheet - Page 3

• Manufacturer Part Number: K6R1004C1C
• Description: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC AND OPERATING CHARACTERISTICS
* V
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS
* V
** V
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input/Output Capacitance
Input Capacitance
CC
IL
IH
(Min) = -2.0V a.c (Pulse Width
=5.0V 5%, Temp.=25 C
(Max) = V
Parameter
Parameter
CC
CC
Item
+ 2.0V a.c (Pulse Width
Supply Relative to V
Parameter
(T
.
A
=25 C, f=1.0MHz)
Commercial
Industrial
8ns) for I
SS
Symbol
V
SS
V
I
V
8ns) for I
I
I
I
OH1
SB1
I
CC
LO
SB
LI
OL
OH
Symbol
V
V
*
Symbol
V
V
20mA.
CC
SS
IH
IL
C
C
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
20mA.
IN
OUT
IN
=8mA
=-4mA
=V
=0mA
=-0.1mA
V
=V
SS
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
CC
-0.5*
Min
(T
Test Conditions
4.5
2.2
IH
Test Conditions
CC
0
CC
- 3 -
A
V
or V
IH
Symbol
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
IH
IN
-0.2V,
V
IN
V
T
or WE=V
V
, V
I/O
P
T
T
STG
IN
IL,
CC
d
A
A
0.2V
=0V
(T
=0V
OUT
A
=0 to 70 C)
IL
Typ
5.0
0
-
-
-0.5 to Vcc+0.5V
Normal
L-Ver.
10ns
12ns
15ns
-0.5 to 7.0
-65 to 150
-40 to 85
MIN
Rating
0 to 70
-
-
1
V
CC
Min
2.4
Max
PRELIMINARY
-2
-2
5.5
0.8
+0.5**
-
-
-
-
-
-
-
-
0
CMOS SRAM
Max
8
6
PRELIMINARY
Max
3.95
0.5
0.4
75
70
68
30
2
2
5
-
September 2001
Unit
Revision 3.0
W
V
V
C
C
C
Unit
V
V
V
V
Unit
pF
pF
Unit
mA
mA
V
V
V
A
A