HAT2129H-EL-E RENESAS [Renesas Technology Corp], HAT2129H-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2129H-EL-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2129H
Rev.5.00 Sep 20, 2005 page 5 of 7
Vin
15 V
50
40
30
20
10
0
Source to Drain Voltage
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Avalanche Test Circuit
0.03
0.01
V
Monitor
10 V
0.3
0.1
50 Ω
5 V
DS
3
1
10 µ
0.8
Rg
0.5
D = 1
V
GS
1.2
= 0.5 V
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Test
100 µ
D. U. T
V
I
Monitor
1.6
AP
SD
L
(V)
2.0
1 m
V
DD
Pulse Width PW (s)
10 m
0
V
50
40
30
20
10
DD
0
25
P
θch – c(t) = γs (t) • θch – c
θch – c = 6.25°C/ W, Tc = 25°C
DM
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
100 m
Channel Temperature Derating
E
AR
I
50
AP
=
Avalanche Waveform
1
2
PW
T
I
D
L • I
75
AP
1
2
100
•
I
V
duty < 0.1 %
Rg ≥ 50 Ω
Tc = 25°C
AP
D =
DD
V
= 20 A
DSS
= 15 V
V
PW
T
DSS
125
– V
10
DD
V
DS
150
V
(BR)DSS