HAT2129H-EL-E RENESAS [Renesas Technology Corp], HAT2129H-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2129H-EL-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2129H
Rev.5.00 Sep 20, 2005 page 4 of 7
100
Static Drain to Source on State Resistance
20
20
15
10
50
10
50
40
30
20
10
0
5
0
0.1
-25
0
V
V
Pulse Test
I
Reverse Drain Current
D
DS
GS
10 V
Case Temperature
= 30 A
0.3
0
Body-Drain Diode Reverse
Dynamic Input Characteristics
= 7 V
Gate Charge
20
V
25
V
DD
vs. Temperature
Recovery Time
DD
1
= 100 V
40
= 100 V
50
50 V
25 V
50 V
25 V
I
3
di/dt = 100 A/µs
V
D
GS
= 5 A, 10 A, 20 A
75
60
5 A, 10 A
= 0, Ta = 25°C
Qg (nc)
10
100 125 150
Tc
I
D
I
80
DR
30
= 20 A
(°C)
V
(A)
GS
100
100
20
16
12
8
4
0
10000
3000
1000
1000
100
300
100
100
300
0.3
0.1
30
10
30
10
10
30
3
1
3
1
0.1
0.1
0
V
f = 1 MHz
Drain to Source Voltage V
t r
Forward Transfer Admittance vs.
GS
0.3
0.3
= 0
Switching Characteristics
Tc = -25°C
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
Drain Current I
10
V
Rg = 4.7
1
t d(on)
1
Drain Current
GS
t d(off)
= 10 V , V
25°C
20
3
3
Ω
, duty ≤ 1 %
V
Pulse Test
10
10
I
D
D
DS
t f
DS
75°C
30
(A)
= 10 V
= 10 V
(A)
30
DS
30
Coss
Ciss
Crss
(V)
100
100
40