HAT2129H-EL-E RENESAS [Renesas Technology Corp], HAT2129H-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2129H-EL-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2129H
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.5.00 Sep 20, 2005 page 2 of 7
Item
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
±20
2.0
40
24
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3200
13.5
0.84
Typ
450
260
6.0
7.0
7.5
40
46
22
33
67
11
50
—
—
—
—
—
Max
1.10
±10
3.5
7.5
9.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
V
V
Rg = 4.7
IF = 30 A, V
IF = 30 A, V
di
D
G
D
D
D
GS
DS
DS
DS
DD
GS
DD
F
= 10 mA, V
= 15 A, V
= 15 A, V
= 15 A, V
= ±100 A, V
/ dt = 50 A/ s
= ±16 V, V
= 40 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
10 V, R
Test Conditions
GS
GS
DS
GS
GS
D
GS
GS
GS
GS
D
L
= 10 V
= 7 V
= 10 V
= 15 A,
= 0
= 0
DS
= 0.67 ,
= 1 mA
DS
= 0
= 0
= 0, f = 1 MHz
= 10 V, I
= 0
= 0
Note4
Note4
(Ta = 25°C)
Note4
Note4
D
= 30 A