K7I161882B-FC16 SAMSUNG [Samsung semiconductor], K7I161882B-FC16 Datasheet - Page 9

• Manufacturer Part Number: K7I161882B-FC16
• Description: 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7I163682B
K7I161882B
DC ELECTRICAL CHARACTERISTICS
Notes: 1. Minimum cycle. I
ABSOLUTE MAXIMUM RATINGS*
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
Input Leakage Current
Output Leakage Current
Operating Current
(x36) : DDR
Operating Current
(x18) : DDR
Standby Current(NOP): DDR
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input Low Voltage
Input High Voltage
Voltage on V
Voltage on V
Voltage on Input Pin Relative to V
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
10. V
8. These are DC test criteria. DC design criteria is V
9. V
2. V
2. |I
3. |I
4. Minimum Impedance Mode when ZQ pin is connected to V
5. Operating current is calculated with 50% read cycles and 50% write cycles.
6. Standby Current is only after all pending read and write burst opeactions are completed.
7. Programmable Impedance Mode.
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
IL
timing parameters.
IH
DDQ
OH
OL
(Min)DC=
(Max)DC=
|=(V
|=(V
must not exceed V
DD
DDQ
DDQ
DDQ
Supply Relative to V
Supply Relative to V
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
-
0.3V, V
V
DDQ
OUT
PARAMETER
+0.3, V
IL
=0mA.
(Min)AC=-1.5V(pulse width ≤ 3ns).
DD
SYMBOL
IH
during normal operation.
(Max)AC=
V
V
V
V
SS
I
V
I
I
I
V
SB1
I
OH1
OH2
OL
CC
CC
OL1
OL2
IL
IH
IL
SS
SS
V
V
Output Disabled,
V
Cycle Time ≥ t
V
Cycle Time ≥ t
Device deselected,
I
All Inputs
I
I
OUT
OH
OL
DDQ
DD
DD
DD
=1.0mA
=-1.0mA
=Max ; V
=Max , I
=Max , I
=0mA, f=Max,
+0.85V(pulse width ≤ 3ns).
REF
TEST CONDITIONS
≤
±50mV. The AC V
0.2V or ≥ V
OUT
OUT
(V
IN
KHKH
KHKH
=V
DD
=0mA
=0mA
DDQ
SS
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
=1.8V ±0.1V, T
Min
Min
.
to V
- 9 -
DD
-0.2V
DDQ
IH
SYMBOL
/V
V
T
T
T
IL
V
V
OPR
BIAS
DDQ
STG
levels are defined separately for measuring
DD
IN
-30
-25
-20
-16
-30
-25
-20
-16
-30
-25
-20
-16
A
=0°C to +70°C)
V
V
DDQ
DDQ
V
V
DDQ
REF
MIN
V
-0.3
-2
-2
/2-0.12
/2-0.12
-
-
-
-
-
-
-
-
-
-
SS
+0.1
-0.2
-0.5 to V
-0.5 to V
-0.5 to 2.9
-65 to 150
-10 to 85
RATING
0 to 70
V
V
DDQ
DDQ
V
DD+
V
DDQ
REF
V
MAX
DD
600
550
500
450
500
450
400
350
260
240
220
200
0.2
+2
+2
/2+0.12
/2+0.12
DDQ
0.3
+0.3
-0.1
UNIT NOTE
mA
mA
mA
µA
µA
V
V
V
V
V
V
UNIT
July. 2004
°C
°C
°C
V
V
V
Rev 3.1
8,10
1,5
1,5
1,6
2,7
3,7
8,9
4
4