K7I161882B-FC16 SAMSUNG [Samsung semiconductor], K7I161882B-FC16 Datasheet - Page 7

• Manufacturer Part Number: K7I161882B-FC16
• Description: 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7I163682B
K7I161882B
Notes: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
LINEAR BURST SEQUENCE TABLE
2. "LOAD" refers to read new address active status with LD=Low, "LOAD" refers to read new address inactive status with LD=High.
3. "READ" refers to read active read status with R/W=High, "WRITE" refers to write active status with R/W=Low
LOAD
BURST SEQUENCE
Second Address
First Address
LOAD
DDR READ
READ
STATE DIAGRAM
LOAD NEW ADDRESS
POWER-UP
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
NOP
- 7 -
LOAD
Case 1
LOAD
SA
0
1
0
WRITE
DDR WRITE
LOAD
Case 2
SA
1
0
LOAD
0
July. 2004
Rev 3.1