GS78108AB GSI [GSI Technology], GS78108AB Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
GS78108AB
Manufacturer Part Number
GS78108AB
Description
1M x 8 8Mb Asynchronous SRAM
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS78108AB.pdf
(11 pages)
Truth Table
X: “H” or “L”
Absolute Maximum Ratings
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Notes:
1.
2.
Rev: 1.04 5/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Input overshoot voltage should be less than V
Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
CE
H
L
L
L
Supply Voltage for -8/10/12
Allowable power dissipation
Ambient Temperature,
Ambient Temperature,
Commercial Range
Input High Voltage
Input Low Voltage
Industrial Range
Storage temperature
Parameter
Supply Voltage
Output Voltage
Parameter
Input Voltage
OE
X
X
H
L
WE
X
H
H
L
DD
Symbol
+2 V and not exceed 20 ns.
V
T
V
V
T
DD
Ac
Ai
IH
IL
Symbol
3/11
V
T
V
V
PD
OUT
STG
DD
IN
DQ
Not Selected
High Z
1
Read
Write
to DQ
Min
–0.3
–40
3.0
2.0
0
8
–0.5 to V
–0.5 to V
Typ
(≤ 4.6 V max.)
(≤ 4.6 V max.)
3.3
—
—
—
—
–0.5 to +4.6
–55 to 150
Rating
1.5
DD
DD
+0.5
+0.5
V
DD
Max
3.6
0.8
70
85
V
+0.3
DD
ISB1, ISB2
© 2003, GSI Technology
Current
I
—
DD
—
GS78108AB
Unit
Unit
o
W
V
V
V
C
o
o
V
V
V
C
C