SI8401DB-T1 VISHAY [Vishay Siliconix], SI8401DB-T1 Datasheet - Page 5

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SI8401DB-T1

Manufacturer Part Number
SI8401DB-T1
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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MICRO FOOT: 4-BUMP (2 X 2, 0.8-mm PITCH)
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
PACKAGE OUTLINE
NOTES (Unless Otherwise Specified):
1.
2.
3.
4.
Laser mark on the silicon die back, coated with a thin metal.
Bumps are Eutectic solder 63/57 Sn/Pb. (Sn 3.8 Ag, 0.7 Cu for Pb-free bumps)
Non-solder mask defined copper landing pad.
The flat side of wafers is oriented at the bottom.
e
Recommended Land
Mark on Backside of Die
8401
XXX
e
* Use millimeters as the primary measurement.
Dim
A
A
A
D
b
E
S
e
1
2
MILLIMETERS*
0.600
0.260
0.340
0.370
1.520
1.520
0.750
0.370
Min
4
Note 3
Solder Mask O X 0.40
O 0.30 X 0.31
b Diamerter
Max
0.650
0.290
0.360
0.410
1.600
1.600
0.850
0.380
A
A
A
2
1
E
0.0236
0.0102
0.0134
0.0146
0.0598
0.0598
0.0295
0.0146
Min
INCHES
Silicon
0.0256
0.0114
0.0142
0.0161
0.0630
0.0630
0.0335
0.0150
Max
e
D
S
Vishay Siliconix
Bump Note 2
S
e
Si8401DB
www.vishay.com
5

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