SI8401DB-T1 VISHAY [Vishay Siliconix], SI8401DB-T1 Datasheet

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SI8401DB-T1

Manufacturer Part Number
SI8401DB-T1
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI8401DB-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI8401DB-T1-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI8401DB-T1-E1
Quantity:
70 000
Part Number:
SI8401DB-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
c.
Document Number: 71674
S-40384—Rev. F, 01-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
Package Reflow Conditions
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Package reflow conditions for lead-free.
Ordering Information: Si8401DB-T1
i
DS
3
4
−20
−20
(V)
Bump Side View
D
S
J
ti
t A bi
D
G
MICRO FOOT
2
1
b
b
0.095 @ V
0.065 @ V
Si8401DB-T1—E3 (Lead Free)
J
J
a
a
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
GS
GS
a
a
Backside View
= −2.5 V
= −4.5 V
(W)
P-Channel 20-V (D-S) MOSFET
8401
xxx
a
A
= 25_C UNLESS OTHERWISE NOTED)
IR/Convection
Steady State
Steady State
Device Marking: 8401
T
T
T
T
t v 5 sec
I
A
A
A
A
D
−4.9
−4.1
VPR
= 25_C
= 70_C
= 25_C
= 70_C
(A)
xxx = Date/Lot Traceability Code
Symbol
Symbol
T
R
R
R
FEATURES
D TrenchFETr Power MOSFET
D New MICRO FOOTr Chipscale Packaging
D Pin Compatible to Industry Standard Si3443DV
APPLICATIONS
D PA, Battery and Load Switch
D Battery Charger Switch
D PA Switch
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
stg
Typical
5 secs
−4.9
−3.9
−2.5
2.77
1.77
35
72
16
−55 to 150
215/245
220/250
"12
−20
−10
Steady State
Maximum
c
c
G
Vishay Siliconix
P-Channel MOSFET
−3.6
−2.8
−2.5
1.47
0.94
45
85
20
Si8401DB
S
D
www.vishay.com
Unit
Unit
_C/W
_C
_C
_C
C/W
W
W
V
V
A
A
1

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SI8401DB-T1 Summary of contents

Page 1

... MICRO FOOT Bump Side View Backside View 8401 xxx Ordering Information: Si8401DB-T1 Si8401DB-T1—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si8401DB Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 71674 S-40384—Rev. F, 01-Mar 25_C J 0.8 1.0 1.2 Si8401DB Vishay Siliconix Capacitance 1500 1200 C iss 900 600 C oss 300 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si8401DB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.3 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 5

... A 0.340 0.360 0.0134 2 b 0.370 0.410 0.0146 D 1.520 1.600 0.0598 E 1.520 1.600 0.0598 e 0.750 0.850 0.0295 S 0.370 0.380 0.0146 Si8401DB Vishay Siliconix Silicon Bump Note INCHES Max 0.0256 0.0114 0.0142 0.0161 0.0630 0.0630 0.0335 0.0150 www.vishay.com 5 ...

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