SI8401DB-T1 VISHAY [Vishay Siliconix], SI8401DB-T1 Datasheet - Page 4

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SI8401DB-T1

Manufacturer Part Number
SI8401DB-T1
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Si8401DB
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
−0.1
−0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.01
−50
0.1
0.1
2
1
2
1
10
10
−4
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
T
Threshold Voltage
I
D
J
− Temperature (_C)
= 250 mA
25
10
Single Pulse
−3
50
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
100
10
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
−2
10
−1
10
1
−1
80
60
40
20
0
0.001
Single Pulse Power, Juncion-To-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
− T
Time (sec)
t
1
A
1
= P
t
2
0.1
DM
Z
thJA
thJA
100
t
t
S-40384—Rev. F, 01-Mar-04
1
2
(t)
Document Number: 71674
= 72_C/W
1
600
10
10

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