KMM5361205C2W SAMSUNG [Samsung semiconductor], KMM5361205C2W Datasheet - Page 14

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KMM5361205C2W

Manufacturer Part Number
KMM5361205C2W
Description
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
DRAM MODULE
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : D
CAS
RAS
DQ
W
OUT
A
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
= OPEN
-
-
-
-
-
-
-
-
-
-
t
ASR
t
ADDRESS
CRP
ROW
t
RAH
t
RAD
t
t
RCD
ASC
t
WCS
t
DS
t
RAS
DATA-IN
t
ADDRESS
COLUMN
RC
t
- 14 -
WP
t
t
DH
CAH
t
WCH
t
RSH
t
RP
KMM5361205C2W/C2WG
t
WRP
t
CHR
t
t
RAS
WRH
t
RC
Rev. 0.0 (Nov. 1997)
t
RP
Don t care
Undefined

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