KMM5361205C2W SAMSUNG [Samsung semiconductor], KMM5361205C2W Datasheet
KMM5361205C2W
Related parts for KMM5361205C2W
KMM5361205C2W Summary of contents
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... DRAM MODULE 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 - 1 - KMM5361205C2W/C2WG Rev. 0.0 (Nov. 1997) ...
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... DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision . KMM5361205C2W/C2WG - 2 - Rev. 0.0 (Nov. 1997) ...
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... EDO DRAM in 24-pin SOJ package mounted on a 72-pin glass- epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5361205C2W is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge con- nector sockets. ...
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... W A0-A9 RAS CAS0 CAS1 U2 CAS2 CAS3 OE W A0-A9 RAS LCAS U1 UCAS OE W A0-A9 W A0-A9 Vcc .1 or .22uF Capacitor for each DRAM Vss - 4 - KMM5361205C2W/C2WG DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 DQ8 DQ9 DQ9 DQ10 DQ10 DQ11 ...
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... CAS cycling : =min) IL HPC t =min) RC Vcc+0.5V, all other pins not under test Vcc) OUT = -5mA) = 4.2mA) and I , address can be changed maximum once while RAS=V CC1 CC3 - 5 - KMM5361205C2W/C2WG Rating - +7.0 -55 to +150 Min Typ Max 4.5 5.5 5 ...
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... RRH t 10 WCH RWL t 13 CWL REF t 0 WCS t 5 CSR t 10 CHR t 5 RPC t CPA - 6 - KMM5361205C2W/C2WG Min Max Max Min Max 110 10K 60 10K 17 50 ...
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... WEZ t 15 WED t 5 WPE t 5 CLCH 8. 9. 10. t (max) RAC 11. t (max) limit, then RCD t . CAC 12 13. 14 KMM5361205C2W/C2WG -5 -6 Max Min Max 30 10 200K 60 200K Either or must be satisfied for a read cycle. ...
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... RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS ADDRESS t RCS CLZ t RAC OPEN - 8 - KMM5361205C2W/C2WG CRP t RSH t CAS t RAL t RRH t CEZ CAC t REZ DATA-OUT Rev. 0.0 (Nov. 1997) t RCH t WEZ Don t care Undefined ...
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... ASR ADDRESS RAS t CSH t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t CWL t RWL t WCS t WCH DATA- KMM5361205C2W/C2WG CRP t RSH t CAS t RAL Rev. 0.0 (Nov. 1997) Don t care Undefined ...
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... RAH ASC CAH ASC CAH COLUMN COLUMN ADDRESS ADDRESS t RCS t CAC CPA CAC t DOH t RAC VALID DATA-OUT t CLZ - 10 - KMM5361205C2W/C2WG t RHCP t HPC CAS CAS ASC CAH ASC CAH COLUMN COLUMN ADDR ADDRESS t RCH t CPA t t CAC ...
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... WCS WCH WCS WCH CWL CWL VALID VALID DATA-IN DATA- KMM5361205C2W/C2WG t RHCP t t HPC RSH CAS CAS ¡ó ASC CAH ¡ó COLUMN ADDRESS ¡ó WCS WCH ¡ó ...
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... In RAS-only refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off. t RAS t RP RPC CSR t CHR t WRP t WRH - 12 - KMM5361205C2W/C2WG RPC RAS t RPC OPEN Rev. 0.0 (Nov. 1997) ...
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... RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS CAC t CLZ t RAC OPEN - 13 - KMM5361205C2W/C2WG RAS t CHR t WRH t WRP RRH t REZ t WEZ DATA-OUT Rev. 0.0 (Nov. 1997 CEZ Don t care Undefined ...
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... ADDRESS RAS CRP t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t WCS t WCH DATA- KMM5361205C2W/C2WG RAS t CHR t WRH t WRP Don t care Undefined Rev. 0.0 (Nov. 1997) ...
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... IL NOTE : This timing diagram is applied to all devices besides 64M DRAM based modules. t RAS t CPT t CHR t ASC COLUMN ADDRESS t t WRH RCS t CLZ t WRH t WCS KMM5361205C2W/C2WG RSH t CAS t RAL t CAH t RRH RCH CAC DATA-OUT t RWL t CWL t WCH ...
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... IH CAS CEZ RPC CSR t t WRP WRH t RP RPC CSR t CHR t WTS t WTH - 16 - KMM5361205C2W/C2WG t t RASS RPS t RPC t CHS OPEN RAS t RPC OPEN Rev. 0.0 (Nov. 1997) Don t care Undefined ...
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... Gold & Solder Plating Lead .010(.25)MAX .050(1.27) Tolerances : .005(.13) unless otherwise specified NOTE : The used device are 1Mx16 EDO DRAM and 1Mx4 Quad CAS with EDO DRAM, TSOP DRAM Part No. : KMM5361205C2W/C2WG -- KM416C1204CJ (400 mil) Revision History Rev 0.0 : Nov. 1997 4.250(107.95) 3.984(101.19) R ...