M378B2873GB0 SAMSUNG [Samsung semiconductor], M378B2873GB0 Datasheet - Page 25

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M378B2873GB0

Manufacturer Part Number
M378B2873GB0
Description
240pin Unbuffered DIMM based on 1Gb G-die
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
Unbuffered DIMM
M378B5673GB0 : 2GB(256Mx64) Module
NOTE :
1. DIMM IDD SPEC is calculated with considering de-actived rank(IDLE) is IDD2N.
M391B5673GB0 : 2GB(256Mx72) Module
NOTE :
1. DIMM IDD SPEC is calculated with considering de-actived rank(IDLE) is IDD2N.
IDD2P0(slow exit)
IDD2P0(slow exit)
IDD2P1(fast exit)
IDD2P1(fast exit)
Symbol
Symbol
IDD4W
IDD4W
IDD2N
IDD2Q
IDD3N
IDD4R
IDD2N
IDD2Q
IDD3N
IDD4R
IDD3P
IDD5B
IDD3P
IDD5B
IDD0
IDD1
IDD6
IDD7
IDD8
IDD0
IDD1
IDD6
IDD7
IDD8
(DDR3-1066@CL=7)
(DDR3-1066@CL=7)
1080
CF8
CF8
400
440
160
192
240
240
240
280
600
600
800
160
960
160
450
495
180
216
270
270
270
315
675
675
900
180
180
(DDR3-1333@CL=9)
(DDR3-1333@CL=9)
datasheet
1305
1160
CH9
CH9
400
456
160
192
240
240
240
280
680
680
840
160
160
450
513
180
216
270
270
270
315
765
765
945
180
180
- 25 -
(DDR3-1600@CL=11)
(DDR3-1600@CL=11)
1200
1350
CK0
CK0
400
504
160
192
240
240
240
280
760
760
840
160
160
450
567
180
216
270
270
270
315
855
855
945
180
180
(DDR3-1866@CL=13)
(DDR3-1866@CL=13)
CMA
CMA
1000
1280
1035
1125
1440
480
560
160
192
320
320
240
320
880
920
160
160
540
630
180
216
360
360
270
360
990
180
180
DDR3 SDRAM
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Rev. 1.2
NOTE
NOTE
1
1
1
1
1
1
1
1
1
1
1
1

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