M470T2864AZ3-CLE6/D5/CC SAMSUNG [Samsung semiconductor], M470T2864AZ3-CLE6/D5/CC Datasheet - Page 15

• Manufacturer Part Number: M470T2864AZ3-CLE6/D5/CC
• Description: DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
• Manufacturer: SAMSUNG [Samsung semiconductor]

12.0 Input/Output Capacitance
* DM is internally loaded to match DQ and DQS identically.
13.0 Electrical Characteristics & AC Timing for DDR2-667/533/400
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
SODIMM
Bin(CL - tRCD - tRP)
(0 °C < T
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
Speed
tRCD
tRAS
tRP
tRC
Parameter
OPER
Parameter
Non-ECC
< 95 °C; V
DDQ
3.75
min
15
15
54
39
= 1.8V + 0.1V; V
5
3
DDR2-667(E6)
5 - 5 - 5
tRFC
tREFI
CIO(400/533)
70000
max
CIO(667)
Symbol
8
8
8
-
-
-
CCK
DD
85 °C < T
0 °C ≤ T
CI
Symbol
= 1.8V + 0.1V)
CASE
CASE
15 of 20
3.75
3.75
min
≤ 85°C
15
15
55
40
≤ 95°C
5
M470T2864AZ3
Min
DDR2-533(D5)
-
-
-
-
4 - 4 - 4
Max
32
34
10
256Mb
9
70000
7.8
3.9
max
75
8
8
8
-
-
-
M470T6464AZ3
Min
512Mb
-
-
-
-
105
7.8
3.9
min
15
15
55
40
5
5
-
DDR2-400(CC)
Max
5.5
24
34
6
(V
127.5
1Gb
3 - 3 - 3
7.8
3.9
DD
=1.8V, V
Rev. 1.4 March 2007
DDR2 SDRAM
M470T5669AZ0
70000
Min
2Gb
max
195
7.8
3.9
-
-
-
-
8
8
-
-
-
-
DDQ
=1.8V, T
327.5
4Gb
7.8
3.9
Max
48
42
10
9
Units
A
ns
ns
ns
ns
ns
ns
ns
=25
Units
Units
ns
µs
µs
pF
o
C)