M470T2864AZ3-CLE6/D5/CC SAMSUNG [Samsung semiconductor], M470T2864AZ3-CLE6/D5/CC Datasheet - Page 13

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M470T2864AZ3-CLE6/D5/CC

Manufacturer Part Number
M470T2864AZ3-CLE6/D5/CC
Description
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
11.0 Operating Current Table :
11.1 M470T2864AZ3 : 128Mx64 1GB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.2 M470T6464AZ3: 64Mx64 512MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
SODIMM
IDD3P-F
IDD3P-S
Symbol
IDD3P-F
IDD3P-S
Symbol
IDD4W
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD4W
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
CE6
120
120
CE6
60
60
667@CL=5
667@CL=5
1,060
1,580
1,400
660
740
360
360
320
144
440
960
980
480
560
180
180
160
260
780
800
880
72
LE6
LE6
64
48
32
24
CD5
120
120
CD5
60
60
533@CL=4
533@CL=4
1,040
1,540
1,360
620
700
360
360
280
144
440
860
860
440
520
180
180
140
260
680
680
860
72
13 of 20
LD5
LD5
64
48
32
24
CCC
CCC
120
120
60
60
400@CL=3
400@CL=3
1,000
1,480
1,320
580
660
320
320
280
144
400
740
720
420
500
160
160
140
240
580
560
840
72
LCC
LCC
64
48
32
24
Rev. 1.4 March 2007
DDR2 SDRAM
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
(T
(T
A
A
=0
=0
o
o
C, VDD= 1.9V)
C, VDD= 1.9V)
Notes
Notes

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