M393T1G60CJA-CE6 SAMSUNG [Samsung semiconductor], M393T1G60CJA-CE6 Datasheet - Page 19

• Manufacturer Part Number: M393T1G60CJA-CE6
• Description: DDR2 Registered SDRAM MODULE
• Manufacturer: SAMSUNG [Samsung semiconductor]

RDIMM
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400
(0 °C < T
12.0 Input/Output Capacitance
* DM is internally loaded to match DQ and DQS identically.
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr,RAS,CAS,WE
Input/output capacitance,
DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin
(CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
OPER
Speed
tRCD
tRAS
tRP
tRC
Part-Number
Parameter
< 95 °C; V
Parameter
DDQ
= 1.8V + 0.1V; V
3.75
min
2.5
15
15
60
45
3
DDR2-800(F7)
-
6 - 6 - 6
Sym.
CCK
CIO
CI1
CI2
70000
max
8
8
8
-
-
-
-
tREFI
DD
M393T5663CZA
M393T5663CZ3
Min
-
-
-
-
= 1.8V + 0.1V)
3.75
min
85 °C < T
0 °C ≤ T
15
15
60
45
DDR2-667(E6)
5
3
Symbol
-
tRFC
Max
12
12
10
11
5 - 5 - 5
CASE
CASE
19 of 26
70000
max
≤ 85°C
M393T5660CZA
≤ 95°C
8
8
8
M393T5660CZ3
-
-
-
-
Min
-
-
-
-
Max
3.75
3.75
min
11
12
12
10
256Mb
15
15
60
45
DDR2-533(D5)
5
-
7.8
3.9
75
4 - 4 - 4
M393T5160CZA
M392T5160CJA
M393T5160CZ3
Min
70000
512Mb
-
-
-
-
max
105
7.8
3.9
8
8
8
-
-
-
-
Max
11
12
12
10
Rev. 1.4 November 2007
127.5
1Gb
(V
7.8
3.9
min
15
15
55
40
DDR2-400(CC)
5
5
-
-
DD
=1.8V, V
3 - 3 - 3
DDR2 SDRAM
M393T1G60CJA
Min
2Gb
-
-
-
-
195
7.8
3.9
70000
max
DDQ
8
8
-
-
-
-
-
327.5
=1.8V, T
4Gb
Max
7.8
3.9
11
12
12
10
Units
A
ns
ns
ns
ns
ns
ns
ns
ns
Units
Units
=25
µs
µs
ns
pF
o
C)