M393T1G60CJA-CE6 SAMSUNG [Samsung semiconductor], M393T1G60CJA-CE6 Datasheet - Page 18

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M393T1G60CJA-CE6

Manufacturer Part Number
M393T1G60CJA-CE6
Description
DDR2 Registered SDRAM MODULE
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
RDIMM
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.7 M393T1G60CJA : 8GB(512Mx4 *36) Module
11.8 M393T1G60CJA : 8GB(512Mx4 *36) Module
IDD3P-S
IDD3P-F
IDD3P-S
IDD3P-F
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD5B
IDD2P
IDD5B
IDD6*
IDD6*
IDD0
IDD1
IDD7
IDD0
IDD1
IDD7
E6(667@CL=5)
E6(667@CL=5)
3960
4140
1080
3240
3240
2880
1296
3510
4860
4860
5670
1080
7470
4830
5140
1940
4160
3940
3820
2236
4200
5710
5800
6670
1080
8920
- considering Register and PLL current value
D5(533@CL=4)
D5(533@CL=4)
18 of 26
3870
4050
1080
3240
3240
2520
1296
3510
4590
4590
5580
1080
7110
4590
4890
1850
4020
3840
3310
2086
4100
5300
5380
6360
1080
8300
CC(400@CL=3)
CC(400@CL=3)
3600
3780
1080
2880
2880
2520
1296
3150
4230
4050
5220
1080
6480
4170
4460
1760
3520
3380
3160
1936
3640
4800
4690
5780
1080
7410
Rev. 1.4 November 2007
DDR2 SDRAM
(T
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
(T
Unit
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
=0
A
=0
o
C, VDD= 1.9V)
o
C, VDD= 1.9V)
Notes
Notes

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