M393T1G60CJA-CE6 SAMSUNG [Samsung semiconductor], M393T1G60CJA-CE6 Datasheet - Page 16
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M393T1G60CJA-CE6
Manufacturer Part Number
M393T1G60CJA-CE6
Description
DDR2 Registered SDRAM MODULE
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M393T1G60CJA-CE6.pdf
(26 pages)
RDIMM
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.3 M393T5660CZ3 / M393T5660CZA : 2GB(256Mx4 *18) Module
11.4 M393T5660CZ3 / M393T5660CZA : 2GB(256Mx4 *18) Module
IDD3P-S
IDD3P-F
IDD3P-S
IDD3P-F
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
IDD2P
IDD5B
IDD6*
IDD6*
IDD0
IDD1
IDD7
IDD0
IDD1
IDD7
F7(800@CL=6)
F7(800@CL=6)
1620
1800
2880
2880
3330
5400
2310
2570
1520
1470
1540
1054
1730
3530
3670
4160
6430
1170
270
810
900
810
324
270
910
270
- considering Register and PLL current value
E6(667@CL=5)
E6(667@CL=5)
1530
1710
1080
2430
2430
3240
5040
2120
2370
1430
1310
1350
1570
2990
3110
3920
5910
270
810
810
720
324
270
850
954
270
16 of 26
D5(533@CL=4)
D5(533@CL=4)
1440
1620
1080
2160
2160
3150
4680
1930
2170
1340
1240
1160
1500
2630
2730
3680
5390
790
854
270
270
810
810
630
324
270
CC(400@CL=3)
CC(400@CL=3)
Rev. 1.4 November 2007
1440
1620
2070
1890
3060
4320
1830
2060
1160
1080
1060
1340
2450
2350
3440
4870
270
720
720
630
324
990
270
730
754
270
DDR2 SDRAM
(T
(T
A
A
=0
=0
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
o
o
C, VDD= 1.9V)
C, VDD= 1.9V)
Notes
Notes