K4H1G0438A SAMSUNG [Samsung semiconductor], K4H1G0438A Datasheet - Page 15

• Manufacturer Part Number: K4H1G0438A
• Description: 1Gb A-die SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
K4H1G0438A
K4H1G0838A
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Area
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Rev. 1.1 January 2007
Specification
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
DDR SDRAM
DDR266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V