K4H1G0438A SAMSUNG [Samsung semiconductor], K4H1G0438A Datasheet - Page 14

• Manufacturer Part Number: K4H1G0438A
• Description: 1Gb A-die SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
16.0 AC Operating Conditions
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
K4H1G0438A
K4H1G0838A
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Parameter/Condition
Parameter
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.5V
0
AC overshoot/Undershoot Definition
0.5
0.6875
VDD
Area
1.0
Overshoot
1.5
2.0
2.5
3.0
VIH(AC)
VID(AC)
Symbol
VIL(AC)
VIX(AC)
Tims(ns)
3.5
4.0
4.5
0.5*VDDQ-0.2
VREF + 0.31
5.0
Maximum Amplitude = 1.5V
5.5
Min
0.7
undershoot
GND
6.0
6.3125
DDR400
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
6.5
0.5*VDDQ+0.2
7.0
VREF - 0.31
VDDQ+0.6
Rev. 1.1 January 2007
Max
Specification
DDR333
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
DDR SDRAM
Unit
V
V
V
V
DDR266
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
Note
1
2