M36L0R7050B0ZAQE STMICROELECTRONICS [STMicroelectronics], M36L0R7050B0ZAQE Datasheet - Page 16

• Manufacturer Part Number: M36L0R7050B0ZAQE
• Description: 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M36L0R7050T0, M36L0R7050B0
PART NUMBERING
Table 11. Ordering Information Scheme
Example:
M36 L 0 R 7 0 5 0 T 0 ZAQ T
Device Type
M36 = Multi-Chip Package (Multiple Flash + RAM)
Flash 1 Architecture
L = Multilevel, Multiple Bank, Burst mode
Flash 2 Architecture
0 = No Die
Operating Voltage
R = V
= V
= V
= 1.7 to 1.95V
DDF1
DDP
DDQ
Flash 1 Density
7 = 128 Mbit
Flash 2 Density
0 = No Die
RAM 1 Density
5 = 32 Mbit
RAM 0 Density
0 = No Die
Parameter Blocks Location
T = Top Boot Block Flash
B = Bottom Boot Block Flash
Product Version
0 = 0.13µm Flash technology, 85ns speeds;
0.18µm RAM, 85ns speed
Package
ZAQ = Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch
Option
Blank = Standard Packing
T = Tape & Reel Packing
E= Lead-free and RoHS package, standard packing
F= Lead-free and RoHS package, tape and reel packing
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available op-
tions (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST-
Microelectronics Sales Office nearest to you.
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