DN2535N3 Supertex, DN2535N3 Datasheet
DN2535N3
Manufacturer Part Number
DN2535N3
Description
Manufacturer
Supertex
Specifications of DN2535N3
Case
TO-92
Date_code
06+
Ordering Information
*
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Absolute Maximum Ratings
*
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
Distance of 1.6 mm from case for 10 seconds.
Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
BV
BV
350V
400V
DSX
DGX
/
R
(max)
25Ω
25Ω
DS(ON)
150mA
150mA
(min)
I
DSS
N-Channel Depletion-Mode
Vertical DMOS FETs
-55°C to +150°C
DN2535N3
DN2540N3
BV
TO-92
BV
300°C
± 20V
DGX
DSX
Order Number / Package
1
DN2535N5
DN2540N5
Advanced DMOS Technology
Not recommended for new designs. For products in TO-92
(N3) package and TO-243AA (N8) package, please use DN3535
or DN3545 instead.
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
TO-220
Note: See Package Outline section for dimensions.
Where ❋ = 2-week alpha date code
Product marking for TO-243AA:
TO-243AA
G
(SOT-89)
D
S
DN5D❋
TO-243AA*
DN2540N8
D
—
TO-92
S G D
DN2535
DN2540
TAB: DRAIN
TO-220
G
D S
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