EM25LV010-25KGBS EMC [ELAN Microelectronics Corp], EM25LV010-25KGBS Datasheet - Page 14

• Manufacturer Part Number: EM25LV010-25KGBS
• Description: 1 Megabit (128K x 8) Serial Flash Memory
• Manufacturer: EMC [ELAN Microelectronics Corp]

EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Read Data Bytes at Higher Speed (FAST-READ)
The Read Data instruction allows one or more data bytes to be sequentially read from the
memory. The instruction is initiated by driving Chip Select (S#) Low. The instruction code
for the Read Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte
address (A23-A0) and a dummy byte with each bit being latched in during the rising edge of
Serial Clock (C). Then the memory data at that address is shifted out on Serial Data Output
(Q) with each bit being shifted out at a maximum frequency fC during the falling edge of Serial
Clock (C).
The instruction sequence is shown in Figure 15. The first byte address can be at any location.
The address is automatically incremented to the next higher address after each byte of data is
shifted out. The whole memory can, therefore, be read with a single Read Data Bytes at
Higher Speed (FAST_READ) instruction. When the highest address is reached, the address
counter rolls over to 000000h; allowing the read sequence to continue indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip
Select (S#) High. Chip Select (S#) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction executed while a Program or
Write cycle is in progress is rejected without having any effects on the cycle that is in progress.
Page Program (PP)
The Page Program (PP) instruction allows 256 bytes of data to be programmed to the memory
locations that have been erased before the Page Program. Before it can be accepted, a
Write Enable (WREN) instruction must be executed first.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL). The Page Program (PP) instruction is entered by driving Chip Select
(S#) Low, followed by the instruction code, three address bytes, and at least one data byte on
Serial Data Input (D). If the 8 least significant address bits (A7-A0) are not all zeroes, all
transmitted data that go beyond the end of the current page are programmed from the start
address of the same page (from the address whose 8 least significant bits, A7-A0, are all
zeroes).
Chip Select (S#) must be driven Low for the entire duration of the sequence. The instruction
sequence is shown in Figure 16. If more than 256 bytes are sent to the device, the previously
latched data will be discarded and the last 256 data bytes will be programmed correctly within
the same page. If less than 256 Data bytes are sent to device, they will be programmed
correctly at the requested addresses without having any effects on the other location of the
same page. Chip Select (S#) must be driven High after the eighth bit of the last data byte has
been latched in, otherwise the Page Program (PP) instruction will not execute.
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This specification is subject to change without further notice. (11.08.2004 V1.0)