M36P0R9070E0_06 STMICROELECTRONICS [STMicroelectronics], M36P0R9070E0_06 Datasheet - Page 22
M36P0R9070E0_06
Manufacturer Part Number
M36P0R9070E0_06
Description
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.M36P0R9070E0_06.pdf
(23 pages)
- Current page: 22 of 23
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Revision history
8
22/23
Revision history
Table 8.
28-Nov-2005
13-Jul-2006
Date
Document revision history
Revision
1
2
Initial release.
Document status promoted from Preliminary data to full Datasheet.
Document updated to latest version of M58PRxxxJ datasheet, DC
characteristics tables removed (for values refer to M58PRxxxJ and
M69KB128AB datasheets). PSRAM part replaced by M69KB128AB.
H9 ball is DU in
package). T
maximum
PSRAM value for Input Rise and Fall Times filled in in
Operating and AC measurement
ratings.
STG
Figure 2: TFBGA connections (top view through
min and V
Table 2: Main operating modes
PP
max modified in
Changes
conditions.
Table 3: Absolute
modified.
Table 4:
M36P0R9070E0
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