S71PL032J SPANSION [SPANSION], S71PL032J Datasheet - Page 117

• Manufacturer Part Number: S71PL032J
• Description: STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
• Manufacturer: SPANSION [SPANSION]

Maximum Ratings
Notes:
1. V
2. V
3. Overshoot and undershoot specifications are characterized and are not 100% tested.
Notes:
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
August 30, 2004 pSRAM_Type04_18A0
V
V
V
V
V
I
I
I
I
I
IX
OZ
CC
SB1
SB2
CC
OH
OL
IH
IL
Parameter
V
IH(MAX)
IL(MIN)
CC(typ.)
Operating Range
, T
= –0.5V for pulse durations less than 20 ns.
= V
A
CC
= 25°C.
Supply Voltage
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
V
Automatic CE# Power-Down
Current—CMOS Inputs
Automatic CE# Power-Down
Current—CMOS Inputs
CC
(Above which the useful life may be impaired. For user guidelines, not tested)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . . -40°C to +85°C
Supply Voltage to Ground Potential . . . . . . . . . . . . . . . . . . . . . -0.4V to 4.6V
DC Voltage Applied to Outputs in High-Z
State (note 1, 2, 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 3.7V
DC Input Voltage (note 1, 2, 3) . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 3.7V
Output Current into Outputs (Low). . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Static Discharge Voltage . . . . . . . . . >2001V (per MIL-STD-883, Method 3015)
Latch-up Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >200 mA
+ 0.5V for pulse durations less than 20 ns.
Operating Supply Current
Table 35. DC Electrical Characteristics (Over the Operating Range)
Description
A d v a n c e
Ambient Temperature (T
-25°C to +85°C
I
I
F = 0
GND ≤ V
GND ≤ V
f = f
f = 1 MHz
CE# ≥ V
V
f = f
f=0 (OE#, WE#, BHE# and BLE#)
CE# ≥ V
V
f = 0, V
I n f o r m a t i o n
OH
OL
IN
IN
= 0.1 mA
= –1.0 mA
≥ V
≥ V
MAX
max
CC
CC
CC
CC
CC
pSRAM Type 4
IN
OUT
= 1/t
(Address and Data Only),
– 0.2V, V
– 0.2V or V
= 3.3V
≤ V
– 0.2V, CE2 ≤ 0.2V
– 0.2V, CE2 ≤ 0.2V
Test Conditions
≤ V
RC
CC
CC
, Output Disabled
A
IN
)
V
I
CMOS Levels
IN
OUT
≤ 0.2V,
CC
≤ 0.2V,
= 3.3V
= 0 mA
2.7V to 3.3V
V
CC
0.8 * V
V
CC
Min.
-0.4
2.7
-1
-1
- 0.4
CC
(note 1)
Typ.
TBD
V
CC
Max
250
3.3
0.4
0.4
+1
+1
15
40
+ 0.4
3
CC
Unit
=
mA
µA
µA
V
117