IXFN64N50P_09 IXYS [IXYS Corporation], IXFN64N50P_09 Datasheet - Page 2

• Manufacturer Part Number: IXFN64N50P_09
• Description: Polar Power MOSFET HiPerFET
• Manufacturer: IXYS [IXYS Corporation]

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C, Unless Otherwise Specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
GS
R
DS
GS
G
GS
GS
= 25A, -di/dt = 100A/μs
= 64A, V
= 100V
= 2Ω (External)
= 10V, V
= 0V
= 20V, I
= 10V, V
= 0V, V
GS
D
DS
DS
= 0V, Note 1
DS
= 32A, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 32A
= 32A
(T
5,049,961
5,063,307
5,187,117
J
= 25°C, Unless Otherwise Specified)
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
30
Characteristic Values
Characteristic Values
9700
Typ.
0.05
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
970
150
0.6
6.0
50
30
30
25
85
22
50
50
0.20
Max.
250
200
1.5
Max.
64
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN64N50P
7,005,734 B2
7,063,975 B2
7,157,338B2