IXFN64N50P_09 IXYS [IXYS Corporation], IXFN64N50P_09 Datasheet
IXFN64N50P_09
Manufacturer Part Number
IXFN64N50P_09
Description
Polar Power MOSFET HiPerFET
Manufacturer
IXYS [IXYS Corporation]
Datasheet
1.IXFN64N50P_09.pdf
(4 pages)
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
V
M
Weight
GSS
DSS
D25
DM
A
J
JM
stg
L
GS(th)
DSS
DGR
GSS
GSM
AS
D
ISOL
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
Test Conditions
S
ISOL
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 8mA
= 32A, Note 1
GS
≤ V
DS
= 0V
= 0V
DSS
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°
t = 1min
t = 1s
JM
IXFN64N50P
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
Typ.
1.5/13
2500
3000
± 40
500
500
±30
150
625
150
300
2.5
50
64
20
30
Max.
±200
5.5
25
85
Nm/lb.in.
Nm/lb.in.
1
V/ns
mA
mΩ
nA
V~
V~
μA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Advantages
Applications:
miniBLOC, SOT-227 B
D25
rr
Isolation
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation Voltage 2500
Fast Intrinsic Diode
Avalanche Rated
Low Gate Drive Requirement
High Power Density
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Low R
DS(on)
DSS
E153432
DS(on)
= 500V
≤ ≤ ≤ ≤ ≤ 85mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
= 50A
G
D = Drain
S
DS99349F(05/09)
D
V~
S
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IXFN64N50P_09 Summary of contents
Page 1
Polar Power MOSFET TM HiPerFET TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R DGR J V Continuous GSS V Transient GSM ...
Page 2
Symbol Test Conditions (T = 25°C, Unless Otherwise Specified 20V 32A, Note iss 0V 25V 1MHz oss rss t ...
Page 3
Fig. 1. Output Characteristics @ 25º 0.0 1.0 2.0 3 Volts DS Fig. 3. Output Characteristics @ 125º 10V ...
Page 4
Fig. 7. Input Admittance 125º 3.0 3.5 4.0 4 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 240 220 200 180 160 140 ...