IXFN61N50 IXYS Corporation, IXFN61N50 Datasheet

IXFN61N50

Manufacturer Part Number

IXFN61N50

Description

High Current Power MOSFET

Manufacturer

IXYS Corporation

Datasheet

1.IXFN61N50.pdf (2 pages)

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Quantity

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFN61N50

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFN61N50

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MITSUBISHI

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High Current Power MOSFET

N-Channel Enhancement Mode

Preliminary Data Sheet

Symbol

Weight

Symbol

IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700

XYS reserves the right to change limits, test conditions, and dimensions.

D25

GSS

DSS

stg

DSS

DGR

ISOL

GSM

DSS

GS(th)

DS(on)

Test Conditions

Continuous

Transient

50/60 Hz, RMS

Mounting torque

Terminal connection torque (M4)

Test Conditions

Pulse test, t

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C (1)

= 25°C

= 0 V, I

= V

= 20 V DC, V

= 0.8 V

= 0 V

= 10 V, I

Fax: 408-496-0670

DSS

= 12 mA

= 5 mA

= 0.5 I

300 µs, duty cycle

D25

= 0

t = 1 minute

t = 1s

= 1.0 M

= 25°C

= 125°C

= 25°C unless otherwise specified)

2 %

IXFN 58N50

IXFN 61N50

IXFN 58N50

IXFN 61N50

58N50

61N50

Min.

500

1.7

-40 ... +150

Characteristic Values

Maximum Ratings

Typ.

1.5/13 Nm/lb.in.

2500

3000

500

232

244

625

150

200

500

4.0

Max.

85 m

75 m

IXFN 58N50 500V

IXFN 61N50 500V

°C

µA

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030

Features

• International standard package

• Isolation voltage 3000V (RMS)

• Low R

• Rugged polysilicon gate cell structure

• Low drain-to-case capacitance

• Low package inductance (< 10 nH)

• Aluminium Nitride Isolation

Applications

• DC choppers

• AC motor speed controls

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switched mode and resonant mode

Advantages

• Easy to mount

• Space savings

• High power density

(<60 pF)

- reduced RFI

- easy to drive and to protect

- increased current ratings

power supplies

DS (on)

IXFN 58N50

IXFN 61N50

1 = Source

3 = Drain

DSS

HDMOS

miniBLOC, SOT-227 B

Fax: +49-6206-503629

IXYS Semiconductor

58A

61A

D25

process

92810G (10/95)

2 = Gate

4 = Source

85 m

75 m

DS(on)

Related parts for IXFN61N50

IXFN61N50 Summary of contents

Page 1

... 0.5 I DS(on Pulse test, t 300 µs, duty cycle ©1996 IXYS Corporation. All rights reserved. XYS reserves the right to change limits, test conditions, and dimensions. I IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 Maximum Ratings 500 = 1 ...

Page 2

Symbol Test Conditions 0 MHz iss oss C rss ...

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