IXFN44N50Q_03 IXYS [IXYS Corporation], IXFN44N50Q_03 Datasheet - Page 2

• Manufacturer Part Number: IXFN44N50Q_03
• Description: HiPerFET Power MOSFETs Q-Class
• Manufacturer: IXYS [IXYS Corporation]

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
RM
d(on)
d(off)
S
SM
r
f
rr
fs
thJC
thCK
SD
iss
oss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
DS
GS
= I
I
F
S
= 0 V
= 20 V; I
V
V
R
V
, V
= 25A, -di/dt = 100 A/µs, V
GS
GS
GS
G
= 4.7 Ω (External),
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
(T
(T
DSS
DSS
J
J
R
= 25°C, unless otherwise specified)
, I
, I
= 25°C, unless otherwise specified)
= 100 V
D
D
JM
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
30
Characteristic Values
Characteristic Values
7000
0.05
typ.
typ.
960
230
190
1.0
10
42
33
22
75
10
40
86
0.26
max.
max.
192
250
1.5
48
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
Min.
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Millimeter
IXFN 44N50Q
IXFN 48N50Q
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1
6,534,343
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.