IXFN44N50Q_03 IXYS [IXYS Corporation], IXFN44N50Q_03 Datasheet

IXFN44N50Q_03

Manufacturer Part Number

IXFN44N50Q_03

Description

HiPerFET Power MOSFETs Q-Class

Manufacturer

IXYS [IXYS Corporation]

Datasheet

1.IXFN44N50Q_03.pdf (4 pages)

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Symbol

dv/dt

Weight

HiPerFET

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, Low Q

Symbol

D25

GSS

DSS

stg

DGR

GSM

ISOL

DSS

GS(th)

DSS

DS(on)

Test Conditions

Continuous

Transient

50/60 Hz, RMS

Mounting torque

Terminal connection torque

Test Conditions

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

ISOL

≤ 150°C, R

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

= 25°C

≤ 1 mA

= 0 V, I

= V

= ±20 V

= V

= 0 V

= 10 V, I

, di/dt ≤ 100 A/µs, V

DSS

, I

= 1 mA

= 4 mA

, V

= 0.5 I

= 2 Ω

t = 1 min

t = 1 s

, High dv/dt

= 0

D25

= 1 MΩ

44N50

48N50

≤ V

= 25°C, unless otherwise specified)

DSS

= 25°C

= 125°C

IXFN 44N50Q

IXFN 48N50Q

44N50

48N50

44N50

48N50

500

min.

2.0

-55 to +150

Characteristic Values

1.5/13

Maximum Ratings

typ.

2500

3000

176

192

150

500

±20

±30

500

2.5

±100

100

120

100

Nm/lb.in.

max.

4.0

V/ns

°C

µA

Ω

500 V 44 A 120 mΩ Ω Ω Ω Ω

500 V 48 A 100 mΩ Ω Ω Ω Ω

G = Gate

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

•

Applications

•

Advantages

•

miniBLOC, SOT-227 B (IXFN)

IXYS advanced low Q

Low gate charge and capacitances

- easier to drive

-faster switching

Unclamped Inductive Switching (UIS)

rated

Low R

Fast intrinsic diode

International standard package

miniBLOC with Aluminium nitride

isolation for low thermal resistance

Low terminal inductance (<10 nH) and

stray capacitance to heatsink (<35pf)

Molding epoxies meet UL 94 V-0

flammability classification

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

Temperature and lighting controls

Easy to mount

Space savings

High power density

DSS

≤ ≤ ≤ ≤ ≤ 250 ns

E153432

DS (on)

D25

D = Drain

DS98715B(08/03)

process

DS(on)

Related parts for IXFN44N50Q_03

IXFN44N50Q_03 Summary of contents

Page 1

HiPerFET TM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Q , High dv/dt g Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V ...

Page 2

Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...

Page 3

Fig. 1. Output Characteristics @ 25 Deg 10V Volts D S Fig. 3. Output Characteristics @ 125 Deg. C ...

Page 4

Fig. 7. Input Adm ittance 125º 25ºC -40º 3 Volts G S Fig. 9. Source Current vs. Source-To- Drain Voltage 100 ...

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