NVMFS5834NLT1G ONSEMI [ON Semiconductor], NVMFS5834NLT1G Datasheet - Page 4

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NVMFS5834NLT1G

Manufacturer Part Number
NVMFS5834NLT1G
Description
40 V, 75 A, 9.3 m, Single N?Channel
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NVMFS5834NLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NVMFS5834NLT1G
0
1800
1600
1400
1200
1000
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
C
V
I
V
R
Thermal Limit
Package Limit
D
Figure 9. Resistive Switching Time Variation
V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
rss
DD
GS
C
GS
DS(on)
= 20 A
t
C
= 25°C
d(off)
= 32 V
= 4.5 V
= 10 V
oss
V
V
t
DS
DS
t
r
f
Figure 7. Capacitance Variation
Limit
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
C
10
iss
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
1
20
10
10
TYPICAL CHARACTERISTICS
30
V
T
J
GS
= 25°C
http://onsemi.com
= 0 V
t
d(on)
10 ms
100 ms
1 ms
10 ms
dc
100
40
100
4
10
40
30
20
10
50
40
30
20
10
8
6
4
2
0
0
0
0.5
0
25
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 8. Gate−to−Source Voltage vs. Total
Figure 12. Maximum Avalanche Energy vs.
J
GS
T
gs
= 25°C
J
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
SD
50
Starting Junction Temperature
0.6
5
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Q
gd
75
0.7
10
Charge
Q
100
T
0.8
15
125
V
T
0.9
I
20
DS
D
J
150
= 20 A
= 25°C
= 20 V
175
1.0
25

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