NVMFS5834NLT1G ONSEMI [ON Semiconductor], NVMFS5834NLT1G Datasheet - Page 2

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NVMFS5834NLT1G

Manufacturer Part Number
NVMFS5834NLT1G
Description
40 V, 75 A, 9.3 m, Single N?Channel
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NVMFS5834NLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NVMFS5834NLT1G
0
1. Surface−mounted on FR4 board using 1 sq−in pad
2. Surface−mounted on FR4 board using 0.155 in sq (100mm
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
(Cu area = 1.127 in sq [2 oz] including traces).
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
I
C
I
d(ON)
GS(TH)
C
V
DS(on)
G(TOT)
G(TOT)
Q
Q
Q
DSS
GSS
V
t
g
G(TH)
T
R
RR
OSS
RSS
t
t
t
t
SD
ISS
FS
GS
GD
GP
a
b
RR
r
f
J
G
/T
http://onsemi.com
/
J
2
) pad size.
V
V
V
GS
GS
GS
V
V
V
GS
V
V
V
2
V
= 4.5 V, V
I
= 10 V, V
DS
V
GS
= 0 V, f = 1 MHz, V
V
GS
V
GS
GS
S
GS
I
DS
D
GS
GS
V
= 0 V, dIS/dt = 100 A/ms,
= 20 A
= 40 V
= 4.5 V
DS
= 20 A, R
= 0 V,
= 10 V
= 0 V,
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, I
= 5 V, I
I
S
DS
DS
DS
= 20 A
, I
D
= 20 V; I
GS
= 20 V; I
D
G
D
DS
= 250 mA
= 250 mA
= 2.5 W
= 20 A
= ±20 V
= 20 V,
T
T
T
T
DS
J
I
I
J
J
D
D
J
D
= 125°C
D
= 125°C
= 25 °C
= 25°C
= 20 A
= 20 A
= 20 V
= 20 A
= 20 A
Min
40
1.0
34.7
56.4
17.4
0.84
0.72
1231
Typ
11.3
198
141
6.6
8.0
108
5.7
7.1
1.0
4.2
6.3
3.4
0.7
10
18
10
29
24
12
±100
Max
100
13.6
1.0
1.2
3.0
9.3
mV/°C
mV/°C
Unit
mA
nA
mW
ns
ns
nC
nC
pF
V
V
W
V
S
V

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