AM29SL160C AMD [Advanced Micro Devices], AM29SL160C Datasheet - Page 51

• Manufacturer Part Number: AM29SL160C
• Description: 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

REVISION SUMMARY
Revision A (December 1998)
Initial release.
Revision A+1 (January 1999)
Distinctive Characteristics
WP#/ACC pin: In the third subbullet, deleted reference
to increased erase performance.
Device Bus Operations
Accelerated Program and Erase Operations: Deleted
all references to accelerated erase.
Sector/Sector Block Protection and Unprotection:
Changed section name and text to include tables and
references to sector block protection and unprotection.
AC Characteristics
Accelerated Program Timing Diagram: Deleted refer-
ence in title to accelerated erase.
Revision A+2 (March 23, 1999)
Connection Diagrams
Corrected the TSOP pinout on pins 13 and 14.
Revision A+3 (April 12, 1999)
Global
Modified the description of accelerated programming to
emphasize that it is intended only to speed in-system
programming of the device during the system produc-
tion process.
Distinctive Characteristics
Secured Silicon (SecSi) Sector bullet: Added the 8-
byte unique serial number to description.
Device Bus Operations table
Modified Note 3 to indicate sector protection behavior
when V
the WP#/ACC column for write operations.
Ordering Information
Added the “N” designator to the optional processing
section.
Secured Silicon (SecSi) Sector Flash Memory
Region
Modified explanatory text to indicate that devices now
have an 8-byte unique ESN in addition to the 16-byte
r a nd o m ES N . A d de d tab l e f or a dd r e s s ra n g e
clarification.
Revision A+4 (May 14, 1999)
Global
Deleted all references to the unique ESN.
November 1, 2004
IH
is asserted on WP#/ACC. Applied Note 3 to
Am29SL160C
Revision A+5 (July 23, 1999)
Global
Added 90 ns speed option.
Revision A+6 (September 1, 1999)
AC Characteristics
Hardware Reset (RESET#) table: Deleted t
cation. Erase/Program Operations table: Deleted t
specification.
Revision A+7 (September 7, 1999)
Distinctive Characteristics
Ultra low power consumption bullet: Corrected values
to match those in the DC Characteristics table.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Deleted t
Revision B (December 14, 1999)
AC
Operations Timing and
Erase Operations
Deleted t
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision C (February 21, 2000)
Removed “Advance Information” designation from data
sheet. Data sheet parameters are now stable; only
speed, package, and temperature range combinations
are expected to change in future revisions.
Device Bus Operations table
Changed standby voltage specification to V
Standby Mode
Changed standby voltage specification to V
DC Characteristics table
Changed test conditions for I
V.
Revision C+1 (November 14, 2000)
Global
Added dash to speed options and OPNs. Added table
of contents.
AC Characteristics—Read Operations
Changed t
Characteristics—Figure
OES
GHWL
DF
specification.
to 16 ns for all speeds.
and changed OE# waveform to start at
Figure
CC3
17. Program
, I
18. Chip/Sector
CC4
, I
CC5
to V
RPD
CC
CC
± 0.2 V.
± 0.2 V.
CC
specifi-
± 0.2
OES
51