HY27US08561M HYNIX [Hynix Semiconductor], HY27US08561M Datasheet - Page 34

no-image

HY27US08561M

Manufacturer Part Number
HY27US08561M
Description
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HY27US08561M
Manufacturer:
HY
Quantity:
1 000
Part Number:
HY27US08561M
Manufacturer:
HY
Quantity:
1 000
Part Number:
HY27US08561M
Manufacturer:
HY
Quantity:
1 000
Part Number:
HY27US08561M-TPCB
Manufacturer:
SAMSUNG
Quantity:
3 520
Part Number:
HY27US08561M-TPCP
Manufacturer:
HY
Quantity:
5 530
Note: 1. A0-A7 is the address in the Spare Memory area, where A0-A3 are valid and A4-A7 are don't care.
Rev 0.7 / Oct. 2004
ALE
RE
CLE
WE
RB
CE
I/O
2. Only address cycle 4 is required.
Command
50h
Code
Figure 28. Read C Operation, One Page AC Waveform
Add. M
cycle 1
Address M Input
Add. M
cycle 2
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
tWHALL
Add. M
cycle 3
Busy
tBHRL
HY27US(08/16)561M Series
HY27SS(08/16)561M Series
tWHBH
Last Byte or Word in Area C
Data Output from M to
tALLRL2
Data M
Data
Last
34

Related parts for HY27US08561M