HY27US08561M HYNIX [Hynix Semiconductor], HY27US08561M Datasheet - Page 28

• Manufacturer Part Number: HY27US08561M
• Description: 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Table 14: AC Characteristics for Command, Address, Data Input (3.3V Device and 1.8V Device)
Note: 1. If t
Rev 0.7 / Oct. 2004
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ALLWL
ALHWL
CLHWL
CLLWL
DVWH
ELWL
WHALH
WHALL
WHCLH
WHCLL
WHDX
WHEH
WHWH
WLWH
WLWL
Symbol
ELWL
is less than 10ns, t
Symbol
t
t
Alt.
t
t
t
t
t
t
t
t
t
ALH
CLH
ALS
CLS
WH
WP
WC
DH
CH
DS
CS
Address Latch Low to Write Enable Low
Address Latch Hith to Write Enable Low
Command Latch High to Write Enable
Low
Command Latch Low to Write Enable
Low
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch
High
Write Enable High to Command Latch
Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
WLWH
must be minimum 35ns, otherwise, t
Parameter
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Write Cycle time
Data Setup time
WE Pulse Width
ALE Setup time
Data Hold time
CL Setup time
CE Setup time
ALE Hold time
CLE hold time
WE High Hold
CE Hold time
WLWH
time
HY27US(08/16)561M Series
HY27SS(08/16)561M Series
may be minimum 25ns.
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Device
3.3V
25
15
50
(1)
20
10
10
10
10
0
0
0
Device
1.8V
40
20
60
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
28