AM29F004B AMD [Advanced Micro Devices], AM29F004B Datasheet - Page 34

• Manufacturer Part Number: AM29F004B
• Description: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table for further
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
PLCC PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
32
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Input voltage with respect to V
(including A9 and OE#)
Input voltage with respect to V
V
Minimum Pattern Data Retention Time
Parameter
CC
Symbol
assume checkerboard pattern.
than the maximum program times listed.
information on command definitions.
C
C
Current
C
OUT
IN2
IN
Input Capacitance
Output Capacitance
Control Pin Capacitance
A
= 25°C, f = 1.0 MHz.
Parameter Description
SS
SS
CC
Parameter
Description
on all pins except I/O pins
on all I/O pins
. Test conditions: V
A D V A N C E
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
Typ (Note 1)
CC
3.6
1
8
7
= 5.0 V, one pin at a time.
Am29F004B
V
V
V
IN
OUT
PP
I N F O R M A T I O N
= 0
= 0
Max (Note 2)
= 0
10.8
300
8
Test Conditions
Test Conditions
150°C
125°C
CC
, 1,000,000 cycles. Additionally, programming typicals
–100 mA
–1.0 V
–1.0 V
Min
Unit
µs
s
s
s
Excludes 00h programming prior to
erasure (Note 4)
Excludes system level overhead
(Note 5)
Min
10
20
Typ
4
8
8
Comments
V
CC
+100 mA
12.5 V
Max
Max
+ 1.0 V
12
12
6
Years
Years
Unit
8/5/05
Unit
pF
pF
pF