UPG110P NEC, UPG110P Datasheet

UPG110P

Manufacturer Part Number

UPG110P

Description

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

Manufacturer

NEC

Datasheet

1.UPG110P.pdf (8 pages)

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Document No. P11882EJ2V0DS00 (2nd edition)

(Previous No. ID-2454)

Date Published September 1996 P

Printed in Japan

DESCRIPTION

the device is available in chip form. The PG110P is suitable for the gain stage required high gain characteristic of

the microwave communication system and the measurement equipment.

FEATURES

• Ultra wide band : 2 to 8 GHz

• High Power Gain : G

• Medium Power

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

RECOMMENDED OPERATING CONDITIONS (T

PART NUMBER

The PG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And

Supply Voltage

Input Voltage

Input Power

Total Power Dissipation

Operating Temperature

Storage Temperature

*1 Mounted with AuSn hard solder

*2 The temperature of base material beside the chip

Supply Voltage

Input Power

PG110P

: P

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

FORM

O(1 dB)

Chip

= 15 dB TYP.

= +14 dBm TYP. @f = 2 to 8 GHz

opr

stg

tot

–5

DATA SHEET

0.2

= 25 C)

@f = 2 to 8 GHz

–65 to +125

–5 to +0.6

dBm

+10

1.5

= 25 C)

GaAs INTEGRATED CIRCUIT

dBm

PG110P

1989

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